Kageshima, H. : rechercher sur Z-Library

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1

Theory of scanning tunneling microscopy and spectroscopy on Si(100) reconstructed surfaces

Kageshima, H., Tsukada, M.

Journal:

Physical Review B

Année:

1992

Langue:

english

Fichier:

PDF, 540 KB

english, 1992

2

[IEEE 2010 IEEE International Symposium on Circuits and Systems - ISCAS 2010 - Paris, France (2010.05.30-2010.06.2)] Proceedings of 2010 IEEE International Symposium on Circuits and Systems - Performance analysis of 3D-IC for multi-core processors in sub-65nm CMOS technologies

Nomura, Kumiko, Abe, Keiko, Fujita, Shinobu, Kurosawa, Yasuhiko, Kageshima, Atsushi

Année:

2010

Langue:

english

Fichier:

PDF, 1.57 MB

english, 2010

3

Quantum theory of scanning tunneling microscopy and spectroscopy and its application to surface electronic processes

Masaru Tsukada, Katsuyoshi Kobayashi, Nobuyuki Isshiki, Satoshi Watanabe, Hiroyuki Kageshima, Tatsuo Schimizu

Journal:

Journal of Molecular Catalysis

Année:

1993

Langue:

english

Fichier:

PDF, 879 KB

english, 1993

4

Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0 0 0 1)

H. Hibino, H. Kageshima, F.-Z. Guo, F. Maeda, M. Kotsugi, Y. Watanabe

Journal:

Applied Surface Science

Année:

2008

Langue:

english

Fichier:

PDF, 753 KB

english, 2008

5

Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon

Y. Ono, Y. Miyazaki, S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara, E. Ohta

Journal:

Thin Solid Films

Année:

2011

Langue:

english

Fichier:

PDF, 1.16 MB

english, 2011

6

Electronic and surface properties of H-terminated diamond surface affected by NO2 gas

Kubovic, M., Kasu, M., Kageshima, H., Maeda, F.

Journal:

Diamond and Related Materials

Année:

2010

Langue:

english

Fichier:

PDF, 1.01 MB

english, 2010

7

Gate interfacial layer in hydrogen-terminated diamond field-effect transistors

Kasu, Makoto, Ueda, Kenji, Kageshima, Hiroyuki, Yamauchi, Yoshiharu

Journal:

Diamond and Related Materials

Année:

2008

Langue:

english

Fichier:

PDF, 547 KB

english, 2008

8

Structural and electrical properties of H-terminated diamond field-effect transistor

Kubovic, Michal, Kasu, Makoto, Yamauchi, Yoshiharu, Ueda, Kenji, Kageshima, Hiroyuki

Journal:

Diamond and Related Materials

Année:

2009

Langue:

english

Fichier:

PDF, 639 KB

english, 2009

9

Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers

Odawara, Michiya, Kamei, Koji, Miyasaka, Yoshihiko, Yamashita, Tamotsu, Takahashi, Seiichi, Kageshima, Yoshiaki, Momose, Kenji, Osawa, Hiroshi, Sato, Takayuki

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 7.55 MB

english, 2014

10

Effect of the Si/SiO[sub 2] interface on self-diffusion of Si in semiconductor-grade SiO[sub 2]

Fukatsu, Shigeto, Takahashi, Tomonori, Itoh, Kohei M., Uematsu, Masashi, Fujiwara, Akira, Kageshima, Hiroyuki, Takahashi, Yasuo, Shiraishi, Kenji, Gösele, Ulrich

Journal:

Applied Physics Letters

Année:

2003

Langue:

english

Fichier:

PDF, 307 KB

english, 2003

11

Scanning-tunneling-microscopy observation of thermal oxide growth on Si(111)7×7 surfaces

Ono, Y., Tabe, M., Kageshima, H.

Journal:

Physical Review B

Année:

1993

Langue:

english

Fichier:

PDF, 1.23 MB

english, 1993

12

Reconstructions on the Si(113) surface

Sakama, H., Kunimatsu, D., Kageshima, M., Kawazu, A.

Journal:

Physical Review B

Année:

1996

Langue:

english

Fichier:

PDF, 232 KB

english, 1996

13

4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate

Miyasaka, Akira, Norimatsu, Jun, Fukada, Keisuke, Tajima, Yutaka, Kageshima, Yoshiaki, Muto, Daisuke, Odawara, Michiya, Okano, Taichi, Momose, Kenji, Osawa, Yuji, Osawa, Hiroshi, Sato, Takayuki

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 548 KB

english, 2014

14

Particulate photocathode composed of (ZnSe)0.85(CuIn0.7Ga0.3Se2)0.15 synthesized with Na2S for enhanced sunlight-driven hydrogen evolution

Kageshima, Yosuke, Minegishi, Tsutomu, Goto, Yosuke, Kaneko, Hiroyuki, Domen, Kazunari

Journal:

Sustainable Energy Fuels

Année:

2018

Langue:

english

Fichier:

PDF, 7.08 MB

english, 2018

15

Spontaneous distortion via the appearance of ferromagnetism in Pd ultrathin films: Observation of an inverse mechanism for the Stoner criterion

Sakuragi, Shunsuke, Tajiri, Hiroo, Kageshima, Hiroyuki, Sato, Tetsuya

Journal:

Physical Review B

Année:

2018

Langue:

english

Fichier:

PDF, 521 KB

english, 2018

16

Level-Resonance Transition of Deep States Produced by Nitrogen Vacancies in Nitride Semiconductors

E. Yamaguchi, K. Shiraishi, H. Kageshima

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 128 KB

english, 1999

17

Mechanical force analysis of peptide interactions using atomic force microscopy

Chikashi Nakamura, Seiji Takeda, Masami Kageshima, Miyuki Ito, Naoki Sugimoto, Kazuko Sekizawa, Jun Miyake

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 168 KB

english, 2004

18

The surface structure of an organic conductor (BEDT-TTF) 2KHg(SCN)4 observed by scanning tunneling microscopy

Masamichi Yoshimura, Norihiko Ara, Masami Kageshima, Ryu Shiota, Akira Kawazu, Hidemi Shigekawa, Yoshio Saito, Masashi Oshima, Hatsumi Mori, Hideki Yamochi, Gunzi Saito

Journal:

Surface Science Letters

Année:

1991

Langue:

english

Fichier:

PDF, 121 KB

english, 1991

19

Novel features of surface electronic structure revealed by the theoretical simulation of scanning tunneling microscopy/spectroscopy

Masaru Tsukada, Katsuyoshi Kobayashi, Nobuyuki Isshiki, Hiroyuki Kageshima, Toshihiro Uchiyama, Satoshi Watanabe, Tatsuo Schimizu

Journal:

Surface Science Letters

Année:

1993

Langue:

english

Fichier:

PDF, 76 KB

english, 1993

20

First-principles theory of scanning tunneling microscopy

Masaru Tsukada, Katsuyoshi Kobayashi, Nobuyuki Isshiki, Hiroyuki Kageshima

Journal:

Surface Science Reports

Année:

1991

Langue:

english

Fichier:

PDF, 2.20 MB

english, 1991

21

Imaging of polydiacetylenes by atomic force microscopy

H. Yamada, S. Okada, T. Fujii, M. Kageshima, A. Kawazu, H. Matsuda, H. Nakanishi, K. Nakayama

Journal:

Applied Surface Science

Année:

1993

Langue:

english

Fichier:

PDF, 571 KB

english, 1993

22

First-principles simulation of STM/STS of Si(100) reconstructed surfaces

Nobuyuki Isshiki, Hiroyuki Kageshima, Katsuyoshi Kobayashi, Masaru Tsukada

Journal:

Ultramicroscopy

Année:

1992

Langue:

english

Fichier:

PDF, 418 KB

english, 1992

23

Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS

S. Hosoi, K. Nakajima, M. Suzuki, K. Kimura, Y. Shimizu, S. Fukatsu, K.M. Itoh, M. Uematsu, H. Kageshima, K. Shiraishi

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2006

Langue:

english

Fichier:

PDF, 197 KB

english, 2006

24

Formation of stable N–V–O complexes in Si

H Kageshima, A Taguchi, K Wada

Journal:

Physica B: Condensed Matter

Année:

2003

Langue:

english

Fichier:

PDF, 231 KB

english, 2003

25

Theoretical study of vacancy supersaturation during silicon crystal growth and nitrogen-doping effects

A. Taguchi, H. Kageshima, K. Wada

Journal:

Physica B: Condensed Matter

Année:

2006

Langue:

english

Fichier:

PDF, 116 KB

english, 2006

26

Mechanism of oxide deformation during silicon thermal oxidation

H. Kageshima, M. Uematsu, K. Akagi, S. Tsuneyuki, T. Akiyama, K. Shiraishi

Journal:

Physica B: Condensed Matter

Année:

2006

Langue:

english

Fichier:

PDF, 127 KB

english, 2006

27

First-principles study of strain effects on Mn in Si

S. Yabuuchi, E. Ohta, H. Kageshima, A. Taguchi

Journal:

Physica B: Condensed Matter

Année:

2006

Langue:

english

Fichier:

PDF, 260 KB

english, 2006

28

Systematic theoretical investigations of adsorption behavior on the GaAs(0 0 1)-c(4 × 4) surfaces

Tomonori Ito, Kazumi Tsutsumida, Kohji Nakamura, Yoshihiro Kangawa, Kenji Shiraishi, Akihito Taguchi, Hiroyuki Kageshima

Journal:

Applied Surface Science

Année:

2004

Langue:

english

Fichier:

PDF, 243 KB

english, 2004

29

Electrode performance of layered LiNi0.5Ti0.5O2 prepared by ion exchange

Masayuki Tsuda, Hajime Arai, Masaya Takahashi, Hideaki Ohtsuka, Yoji Sakurai, Koji Sumitomo, Hiroyuki Kageshima

Journal:

Journal of Power Sources

Année:

2005

Langue:

english

Fichier:

PDF, 241 KB

english, 2005

30

Two-dimensional simulation of pattern-dependent oxidation of silicon nanostructures on silicon-on-insulator substrates

M. Uematsu, H. Kageshima, K. Shiraishi, M. Nagase, S. Horiguchi, Y. Takahashi

Journal:

Solid-State Electronics

Année:

2004

Langue:

english

Fichier:

PDF, 473 KB

english, 2004

31

Reaction mechanisms of oxygen at SiO2/Si(1 0 0) interface

Toru Akiyama, Hiroyuki Kageshima

Journal:

Surface Science

Année:

2005

Langue:

english

Fichier:

PDF, 1.78 MB

english, 2005

32

Study of oxidized Cu(1 1 0) surface using noncontact atomic force microscopy

Shohei Kishimoto, Masami Kageshima, Yoshitaka Naitoh, Yan Jun Li, Yasuhiro Sugawara

Journal:

Surface Science

Année:

2008

Langue:

english

Fichier:

PDF, 1.40 MB

english, 2008

33

Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion

Masashi Uematsu, Hiroyuki Kageshima, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi, Minoru Otani, Atsushi Oshiyama

Journal:

Thin Solid Films

Année:

2006

Langue:

english

Fichier:

PDF, 361 KB

english, 2006

34

A first-principles study of O2 incorporation and its diffusion in compressively strained high-density silicon oxides

Toru Akiyama, Keiichi Kawamoto, Hiroyuki Kageshima, Masashi Uematsu, Kohji Nakamura, Tomonori Ito

Journal:

Thin Solid Films

Année:

2006

Langue:

english

Fichier:

PDF, 293 KB

english, 2006

35

Step response measurement of AFM cantilever for analysis of frequency-resolved viscoelasticity

Tatsuya Ogawa, Shinkichi Kurachi, Masami Kageshima, Yoshitaka Naitoh, Yan Jun Li, Yasuhiro Sugawara

Journal:

Ultramicroscopy

Année:

2010

Langue:

english

Fichier:

PDF, 515 KB

english, 2010

36

Multifrequency high-speed phase-modulation atomic force microscopy in liquids

Yan Jun Li, Kouhei Takahashi, Naritaka Kobayashi, Yoshitaka Naitoh, Masami Kageshima, Yasuhiro Sugawara

Journal:

Ultramicroscopy

Année:

2010

Langue:

english

Fichier:

PDF, 468 KB

english, 2010

37

Lateral forces during manipulation of a single C60 molecule on the Si(0 0 1)-2×1 surface

Masami Kageshima, Hisato Ogiso, Hiroshi Tokumoto

Journal:

Surface Science

Année:

2002

Langue:

english

Fichier:

PDF, 389 KB

english, 2002

38

Unfolding process of a single peptide molecule on a substrate was investigated by atomic force microscope

Seiji Takeda, Arkadiusz Ptak, Masami Kageshima, Hiroshi Tokumoto, Chikashi Nakamura, Jun Miyake

Journal:

Surface Science

Année:

2003

Langue:

english

Fichier:

PDF, 106 KB

english, 2003

39

Theory of thermal Si oxide growth rate taking into account interfacial Si emission effects

H. Kageshima, M. Uematsu, K. Shiraishi

Journal:

Microelectronic Engineering

Année:

2001

Langue:

english

Fichier:

PDF, 554 KB

english, 2001

40

Selectivity for O-adsorption position on dihydride Si(100) surfaces

Hiroyuki Kageshima, Kenji Shiraishi, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda

Journal:

Applied Surface Science

Année:

2000

Langue:

english

Fichier:

PDF, 105 KB

english, 2000

41

Noncontact atomic force microscopy in liquid environment with quartz tuning fork and carbon nanotube probe

Masami Kageshima, Henriette Jensenius, Martin Dienwiebel, Yoshikazu Nakayama, Hiroshi Tokumoto, Suzanne P. Jarvis, Tjerk H. Oosterkamp

Journal:

Applied Surface Science

Année:

2002

Langue:

english

Fichier:

PDF, 152 KB

english, 2002

42

Microscopic mechanism of interfacial reaction during Si oxidation

Toru Akiyama, Hiroyuki Kageshima

Journal:

Applied Surface Science

Année:

2003

Langue:

english

Fichier:

PDF, 138 KB

english, 2003

43

Systematic theoretical investigations of miscibility in Si1−x−yGexCy thin films

Tomonori Ito, Kohji Nakamura, Yoshihiro Kangawa, Kenji Shiraishi, Akihito Taguchi, Hiroyuki Kageshima

Journal:

Applied Surface Science

Année:

2003

Langue:

english

Fichier:

PDF, 111 KB

english, 2003

44

Silicon-kicking-out mechanism in initial oxide formation on hydrogen-terminated silicon (100) surfaces

Hiroyuki Kageshima, Kenji Shiraishi

Journal:

Applied Surface Science

Année:

1998

Langue:

english

Fichier:

PDF, 92 KB

english, 1998

45

Theoretical investigation of inter-surface diffusion on non-planar GaAs surfaces

Kenji Shiraishi, Yasuo Y. Suzuki, Hiroyuki Kageshima, Tomonori Ito

Journal:

Applied Surface Science

Année:

1998

Langue:

english

Fichier:

PDF, 130 KB

english, 1998

46

First principles study of isotope effect in hydrogen-bonded K3H(SO4):: II — Zero-point oscillation effect

Yuji Suwa, Jun Yamauchi, Hiroyuki Kageshima, Shinji Tsuneyuki

Journal:

Materials Science and Engineering: B

Année:

2001

Langue:

english

Fichier:

PDF, 305 KB

english, 2001

47

First principles study of isotope effect in hydrogen-bonded K3H(SO4)2: I — stable structures

Yuji Suwa, Jun Yamauchi, Hiroyuki Kageshima, Shinji Tsuneyuki

Journal:

Materials Science and Engineering: B

Année:

2001

Langue:

english

Fichier:

PDF, 207 KB

english, 2001

48

Excitonic resonant photorefractive devices around 1.06 μm

T. Shimura, S. Iwamoto, H. Kageshima, S. Taketomi, M. Nishioka, T. Someya, Y. Arakawa, K. Fukutani, K. Kuroda

Journal:

Optical Materials

Année:

2001

Langue:

english

Fichier:

PDF, 150 KB

english, 2001

49

Designing of silicon effective quantum dots by using the oxidation-induced strain: a theoretical approach

Kenji Shiraishi, Masao Nagase, Seiji Horiguchi, Hiroyuki Kageshima, Masashi Uematsu, Yasuo Takahashi, Katsumi Murase

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2000

Langue:

english

Fichier:

PDF, 134 KB

english, 2000

50

Diamond RF FETs and other approaches to electronics

Makoto Kasu, Kenji Ueda, Hiroyuki Kageshima, Yoshitaka Taniyasu

Journal:

physica status solidi (c)

Année:

2008

Langue:

english

Fichier:

PDF, 524 KB

english, 2008